Associate III - VLSI MDST
NoidaFull-time3–5 yrsPosted 1 week ago
Mid-level electrical and electronics role at UST in Noida. Needs 3–5 years.
About the role
We are looking for a Memory Design Engineer with strong fundamentals in advanced-node memory design. The ideal candidate will have hands-on experience in SRAM design, modeling, verification, and circuit design, with exposure to cutting-edge foundry technologies.
What you'll do
- Design and development of high-performance SRAM and memory circuits at advanced technology nodes
- Memory circuit design, modeling, and verification across multiple process corners
- Work on advanced foundry nodes (2nm / 3nm / 4nm); experience on lower nodes is highly preferred
- Perform detailed circuit simulations, analysis, and debugging to meet PPA targets
- Contribute to design reviews and drive solutions based on strong design fundamentals. Required Skills & Qualifications
What you need
- Circuit design
- VLSI